|
DS502ST Datasheet, PDF (3/7 Pages) Dynex Semiconductor – Rectifier Diode | |||
|
◁ |
DS502ST
SURGE RATINGS
Symbol
Parameter
I
Surge (non-repetitive) forward current
FSM
I2t
I2t for fusing
IFSM
Surge (non-repetitive) forward current
I2t
I2t for fusing
Conditions
10ms half sine; T = 175oC
case
VR = 50% VRRM - 1/4 sine
10ms half sine; Tcase = 175oC
VR = 0
Max. Units
6.5
kA
211 x 103 A2s
8.0
kA
320 x 103 A2s
THERMAL AND MECHANICAL DATA
Symbol
Parameter
Rth(j-c)
Thermal resistance - junction to case
Rth(c-h)
Thermal resistance - case to heatsink
Tvj
Virtual junction temperature
Tstg
Storage temperature range
-
Clamping force
Conditions
Double side cooled
dc
Single side cooled
Clamping force 4.5kN
with mounting compound
Anode dc
Cathode dc
Double side
Single side
Forward (conducting)
Reverse (blocking)
Min. Max. Units
-
0.07 oC/W
-
0.14 oC/W
-
0.14 oC/W
-
0.02 oC/W
-
0.04 oC/W
-
185
oC
-
175
oC
â55 200
oC
3.5 5.0
kN
CHARACTERISTICS
Symbol
IRM
VTO
rT
Parameter
Peak reverse current
Threshold voltage
Slope resistance
Conditions
At V , T = 175oC
RRM case
At Tvj = 175ËC
At Tvj = 175ËC
Min. Max. Units
-
30 mA
-
0.84 V
- 0.667 mâ¦
3/7
www.dynexsemi.com
|
▷ |