DS1107SG Datasheet, PDF (3/7 Pages) Dynex Semiconductor – Rectifier Diode

DS1107SG
SURGE RATINGS
Symbol
Parameter
I
Surge (non-repetitive) forward current
FSM
I²t
I²t for fusing
I_FSM
Surge (non-repetitive) forward current
I²t
I²t for fusing
Conditions
10ms half sine; T = 150^oC
case
V_R = 50% V_RRM - 1/4 sine
10ms half sine; T_case = 150^oC
V_R = 0
Max. Units
12.0
kA
0.72x 10⁶ A²s
15.0
kA
1.125 x 10⁶ A²s
THERMAL AND MECHANICAL DATA
Symbol
Parameter
R_th(j-c)
Thermal resistance - junction to case
R_th(c-h)
Thermal resistance - case to heatsink
T_vj
Virtual junction temperature
T_stg
Storage temperature range
-
Clamping force
Conditions
Double side cooled
dc
Single side cooled
Clamping force 12.0kN
with mounting compound
Anode dc
Cathode dc
Double side
Single side
Forward (conducting)
Reverse (blocking)
Min. Max. Units
- 0.032 ^oC/W
- 0.064 ^oC/W
- 0.064 ^oC/W
- 0.008 ^oC/W
- 0.016 ^oC/W
-
160
o_C
-
150
o_C
-55 175
o_C
11.5 13.5 kN
3/7
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