DRD8880H22_15 Datasheet, PDF (3/6 Pages) Dynex Semiconductor – Rectifier Diode

THERMAL AND MECHANICAL RATINGS
DRD8880H22
-3-
Symbol
Parameter
Test Conditions
Rth(j-c) Thermal resistance – junction to case Double side cooled
DC
Rth(c-h) Thermal resistance – case to heatsink Double side cooled
DC
Tvj
Virtual junction temperature
Blocking VDRM / VRRM
Tstg
Storage temperature range
Fm
Clamping force
Min.
Max. Units
-
0.004 °C/W
-
0.0008 °C/W
-40
160
°C
-40
160
°C
110
130
kN
CHARACTERISTICS
Symbol
Parameter
VFM
Forward voltage
IRM
Peak reverse current
QS
Total stored charge
VTO
Threshold voltage
rT
Slope resistance
Test Conditions
At 6000A peak, Tcase = 160°C
At VDRM, Tcase = 160°C
IF = 4000A, dIRR/dt =10A/µs
Tcase = 160°C, VR =100V
At Tvj = 160°C
At Tvj = 160°C
Min.
-
-
-
-
-
Max.
0.98
600
8000
0.77
0.035
Units
V
mA
µC
V
m
3/6
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