DRD870G40_15 Datasheet, PDF (3/7 Pages) Dynex Semiconductor – Rectifier Diode

DRD870G40
-3-
SURGE RATINGS
Symbol
Parameter
IFSM
Surge (non-repetitive) on-state current
I²t
I²t for fusing
IFSM
Surge (non-repetitive) on-state current
I²t
I²t for fusing
Test Conditions
10ms half sine, Tcase = 150°C
VR = 50% VRRM - ¼ sine
10ms half sine, Tcase = 150°C
VR = 0
Max.
12
0.72
15
1.125
Units
kA
MA²s
kA
MA²s
THERMAL AND MECHANICAL RATINGS
Symbol
Parameter
Test Conditions
Min.
Rth(j-c)
Thermal resistance – junction to case Double side cooled
Single side cooled
Rth(c-h)
Tvj
Tstg
Fm
Thermal resistance – case to heatsink Clamping force 12kN
(with mounting compound)
Virtual junction temperature
On-state (conducting)
Reverse (blocking)
Storage temperature range
Clamping force
DC
-
Anode DC
-
Cathode DC
-
Double side
-
Single side
-
-
-
-55
11.5
Max. Units
0.032
0.064
0.064
0.008
0.016
160
150
175
13.5
°C/W
°C/W
°C/W
°C/W
°C/W
°C
°C
°C
kN
3/7
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