DRD420D Datasheet, PDF (3/7 Pages) Dynex Semiconductor – Rectifier Diode

DRD420D
SURGE RATINGS
Symbol
Parameter
I_FSM
Surge (non-repetitive) forward current
I²t
I²t for fusing
I
Surge (non-repetitive) forward current
FSM
I²t
I²t for fusing
Conditions
10ms half sine; T_case = 175^oC
V_R = 50% V_RRM - 1/4 sine
10ms half sine; T_case = 175^oC
V_R = 0
Max. Units
56
kA
15.68 x 10⁶ A²s
70
kA
24.5 x 10⁶ A²s
THERMAL AND MECHANICAL DATA
Symbol
Parameter
R_th(j-c)
Thermal resistance - junction to case
R
th(c-h)
Thermal resistance - case to heatsink
T_vj
Virtual junction temperature
T
Storage temperature range
stg
-
Clamping force
Conditions
Double side cooled
dc
Single side cooled
Anode dc
Cathode dc
Clamping force 45.0kN
with mounting compound
Double side
Single side
Forward (conducting)
Reverse (blocking)
Min. Max. Units
- 0.013 ^oC/W
- 0.025 ^oC/W
- 0.027 ^oC/W
- 0.003 ^oC/W
- 0.006 ^oC/W
-
185
o_C
-
175
o_C
-55 200
o_C
40.0 48.0 kN
3/7
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