DRD3770A52_15 Datasheet, PDF (3/7 Pages) Dynex Semiconductor – Rectifier Diode

SEMICONDUCTOR
SURGE RATINGS
Symbol
Parameter
IFSM
Surge (non-repetitive) on-state current
I²t
I²t for fusing
IFSM
Surge (non-repetitive) on-state current
I²t
I²t for fusing
DRD3770A52
-3-
Test Conditions
10ms half sine, Tcase = 150°C
VR = 50% VRRM - ¼ sine
10ms half sine, Tcase = 150°C
VR = 0
Max.
56
15.8
70
24.5
Units
kA
MA²s
kA
MA²s
THERMAL AND MECHANICAL RATINGS
Symbol
Parameter
Test Conditions
Min.
Max. Units
Rth(j-c)
Thermal resistance – junction to case Double side cooled
Single side cooled
Rth(c-h)
Tvj
Tstg
Fm
Thermal resistance – case to heatsink Clamping force 83.0kN
(with mounting compound)
Virtual junction temperature
On-state (conducting)
Reverse (blocking)
Storage temperature range
Clamping force
DC
-
Anode DC
-
Cathode DC
-
Double side
-
Single side
-
-
-
-55
75.0
0.0065
0.013
0.013
0.001
0.002
160
150
150
91.0
°C/W
°C/W
°C/W
°C/W
°C/W
°C
°C
°C
kN
CHARACTERISTICS
Symbol
Parameter
VFM
Forward voltage
IRM
Peak reverse current
VTO
Threshold voltage
rT
Slope resistance
Test Conditions
At 3000A peak, Tcase = 25°C
At VDRM, Tcase = 150°C
At Tvj = 150°C
At Tvj = 150°C
Min.
-
-
-
-
Max.
1.17
200
0.82
0.111
Units
V
mA
V
m
3/8
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