DRD1510G14_15 Datasheet, PDF (3/6 Pages) Dynex Semiconductor – Rectifier Diode

THERMAL AND MECHANICAL RATINGS
DRD1510G14
-3-
Symbol
Parameter
Test Conditions
Rth(j-c) Thermal resistance – junction to case Double side cooled
DC
Rth(c-h) Thermal resistance – case to heatsink Double side cooled
DC
Tvj
Virtual junction temperature
Blocking VDRM / VRRM
Tstg
Storage temperature range
Fm
Clamping force
Min.
-
-
-40
-40
12
Max. Units
0.035
0.008
190
190
18
°C/W
°C/W
°C
°C
kN
CHARACTERISTICS
Symbol
Parameter
VFM
Forward voltage
IRM
Peak reverse current
QS
Total stored charge
VTO
Threshold voltage
rT
Slope resistance
Test Conditions
At 1500A peak, Tcase = 25°C
At VDRM, Tcase = 190°C
IF = 1000A, dIRR/dt =10A/µs
Tcase = 190°C, VR =100V
At Tvj = 190°C
At Tvj = 190°C
Min.
-
-
-
-
-
Max.
1.20
60
2000
0.78
0.188
Units
V
mA
µC
V
m
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