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| DFM900NXM45-F000 Datasheet, PDF (3/6 Pages) Dynex Semiconductor – Fast Recovery Diode Module | |||
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STATIC ELECTRICAL CHARACTERISTICS â PER ARM
Tcase = 25°C unless stated otherwise.
Symbol
Parameter
IRM Peak reverse current
VF Forward voltage
LM Inductance
Test Conditions
VR = 4500V, Tj = 125°C
IF = 900A
IF = 900A, Tj = 125°C
-
DFM900NXM45-F000
Min Typ Max Units
90 mA
3.0
V
3.1
V
30
nH
DYNAMIC ELECTRICAL CHARACTERISTICS â PER ARM
Tcase = 25°C unless stated otherwise
Symbol
Parameter
Qrr Reverse recovery charge
Irr
Peak reverse recovery current
Erec Reverse recovery energy
Test Conditions
IF = 900A
VR =2250V
dIF/dt = 4500A/μs
Tcase = 125°C unless stated otherwise
Symbol
Parameter
Qrr Reverse recovery charge
Irr
Peak reverse recovery current
Erec Reverse recovery energy
Test Conditions
IF = 900A
VR = 2250V
dIF/dt = 4500A/μs
Min Typ. Max Units
700
μC
1000
A
900
mJ
Min Typ. Max Units
1300
μC
1200
A
1600
mJ
3/6
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