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| DFM900FXM12-A000 Datasheet, PDF (3/7 Pages) Dynex Semiconductor – Fast Recovery Diode Module Preliminary Information | |||
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DFM900FXM12-A000
STATIC ELECTRICAL CHARACTERISTICS - PER ARM
Tvj = 25ËC unless stated otherwise.
Symbol
Parameter
Test Conditions
IRM
Peak reveerse current
V
Forward voltage
F
L
Inductance
VR = 1200V, Tvj = 125ËC
IF = 600A
IF = 600A, Tvj = 125ËC
-
STATIC ELECTRICAL CHARACTERISTICS
Tvj = 25ËC unless stated otherwise.
Symbol
Parameter
L
Module inductance
M
(externally connected in parallel)
Test Conditions
-
DYNAMIC ELECTRICAL CHARACTERISTICS - PER ARM
Tvj = 25ËC unless stated otherwise.
Symbol
Parameter
Test Conditions
Irr
Peak reverse recovery current
Qrr
Reverse recovery charge
E
Reverse recovery energy
rec
IF = 900A,
dIF/dt = 7000A/µs,
V = 600V
R
Tvj = 125ËC unless stated otherwise.
Symbol
Parameter
Irr
Peak reverse recovery current
Qrr
Reverse recovery charge
E
Reverse recovery energy
rec
Test Conditions
I = 900A,
F
dIF/dt = 6300A/µs,
VR = 600V
Min. Typ. Max. Units
-
-
15 mA
-
1.9
2.2
V
-
2.1
2.4
V
-
20
-
nH
Min. Typ. Max. Units
-
15
-
nH
Min.
-
-
-
Typ.
600
150
60
Max. Units
-
A
-
µC
-
mJ
Min. Typ. Max. Units
-
720
-
A
-
225
-
µC
-
105
-
mJ
3/7
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