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| DFM800XXM45-TS000 Datasheet, PDF (3/6 Pages) Dynex Semiconductor – Fast Recovery Diode Module | |||
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STATIC ELECTRICAL CHARACTERISTICS â PER ARM
Tcase = 25°C unless stated otherwise.
Symbol
Parameter
IRM Peak reverse current
VF Forward voltage
LM Inductance
Test Conditions
VR = 4500V, Tj = 125°C
IF = 800A
IF = 800A, Tj = 125°C
-
DFM800XXM45-TS000
Min Typ Max Units
60 mA
2.7
V
2.9
V
40
nH
DYNAMIC ELECTRICAL CHARACTERISTICS â PER ARM
Tcase = 25°C unless stated otherwise (when used with DIM800XSM45-T000)
Symbol
Parameter
Qrr Reverse recovery charge
Irr
Peak reverse recovery current
Erec Reverse recovery energy
Test Conditions
IF = 800A
VR =2800V
dIF/dt = 2000A/μs
Min Typ. Max Units
860
μC
650
A
1480
mJ
Tcase = 125°C unless stated otherwise (when used with DIM800XSM45-T000)
Symbol
Parameter
Qrr Reverse recovery charge
Irr
Peak reverse recovery current
Erec Reverse recovery energy
Test Conditions
IF = 800A
VR = 2800V
dIF/dt = 2000A/μs
Min Typ. Max Units
1500
μC
730
A
3650
mJ
3/6
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