 English |
|
|
|
|
|
|
|
| DFM800NXM33-A000_10 Datasheet, PDF (3/6 Pages) Dynex Semiconductor – Fast Recovery Diode Module | |||
| |||
| ◁ |
STATIC ELECTRICAL CHARACTERISTICS â PER ARM
Tcase = 25°C unless stated otherwise.
Symbol
Parameter
IRM Peak reverse current
VF Forward voltage
LM Inductance
Test Conditions
VR = 3300V, Tj = 125°C
IF = 800A
IF = 800A, Tj = 125°C
-
DFM800NXM33-A000
Min Typ Max Units
60 mA
2.5
V
2.5
V
25
nH
DYNAMIC ELECTRICAL CHARACTERISTICS â PER ARM
Tcase = 25°C unless stated otherwise
Symbol
Parameter
Qrr Reverse recovery charge
Irr
Peak reverse recovery current
Erec Reverse recovery energy
Test Conditions
IF = 800A
VR = 1800V
dIF/dt = 4400A/μs
Tcase = 125°C unless stated otherwise
Symbol
Parameter
Qrr Reverse recovery charge
Irr
Peak reverse recovery current
Erec Reverse recovery energy
Test Conditions
IF = 800A
VR = 1800V
dIF/dt = 3000A/μs
Min Typ. Max Units
450
μC
650
A
500
mJ
Min Typ. Max Units
670
μC
670
A
850
mJ
3/6
www.dynexsemi.com
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese