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| DFM600FXM18-A000_15 Datasheet, PDF (3/6 Pages) Dynex Semiconductor – Fast Recovery Diode Module | |||
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STATIC ELECTRICAL CHARACTERISTICS â PER ARM
Tcase = 25°C unless stated otherwise.
Symbol
Parameter
IRM Peak reverse current
VF Forward voltage
LM Inductance
Test Conditions
VR = 1800V, Tj = 125°C
IF = 600A
IF = 600A, Tj = 125°C
DFM600FXM18-A000
Min Typ Max Units
10 mA
2.0 2.3
V
2.0 2.3
V
20
nH
STATIC ELECTRICAL CHARACTERISTICS
Tcase = 25°C unless stated otherwise.
Symbol
LM
Parameter
Module inductance
(externally connected in parallel)
Test Conditions
Min Typ Max Units
15
nH
DYNAMIC ELECTRICAL CHARACTERISTICS â PER ARM
Tcase = 25°C unless stated otherwise
Symbol
Parameter
Qrr Reverse recovery charge
Irr
Peak reverse recovery current
Erec Reverse recovery energy
Test Conditions
IF = 600A
VR = 900V
dIF/dt = 4000A/μs
Tcase = 125°C unless stated otherwise
Symbol
Parameter
Qrr Reverse recovery charge
Irr
Peak reverse recovery current
Erec Reverse recovery energy
Test Conditions
IF = 600A
VR = 900V
dIF/dt = 4000A/μs
Min Typ. Max Units
160
μC
440
A
120
mJ
Min Typ. Max Units
270
μC
510
A
180
mJ
3/6
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