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| DFM500NXM33-TS000 Datasheet, PDF (3/6 Pages) Dynex Semiconductor – Fast Recovery Diode Module | |||
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STATIC ELECTRICAL CHARACTERISTICS â PER ARM
Tcase = 25°C unless stated otherwise.
Symbol
Parameter
IRM Peak reverse current
VF Forward voltage
LM Inductance
Test Conditions
VR = 3300V, Tj = 150°C
IF = 500A
IF = 500A, Tj = 125°C
IF = 500A, Tj = 150°C
-
DFM500NXM33-TS000
Min Typ Max Units
30 mA
2.4
V
2.5
V
2.4
V
25
nH
DYNAMIC ELECTRICAL CHARACTERISTICS â PER ARM
Tcase = 25°C unless stated otherwise
Symbol
Parameter
Qrr Reverse recovery charge
Irr
Peak reverse recovery current
Erec Reverse recovery energy
Test Conditions
IF = 500A
VR = 1800V
dIF/dt = 1400A/μs
Tcase = 125°C unless stated otherwise
Symbol
Parameter
Qrr Reverse recovery charge
Irr
Peak reverse recovery current
Erec Reverse recovery energy
Test Conditions
IF = 500A
VR = 1800V
dIF/dt = 1400A/μs
Tcase = 150°C unless stated otherwise
Symbol
Parameter
Qrr Reverse recovery charge
Irr
Peak reverse recovery current
Erec Reverse recovery energy
Test Conditions
IF = 500A
VR = 1800V
dIF/dt = 1400A/μs
Min Typ. Max Units
285
μC
310
A
335
mJ
Min Typ. Max Units
470
μC
390
A
570
mJ
Min Typ. Max Units
535
μC
400
A
650
mJ
3/6
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