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| DFM300MXS18-A000 Datasheet, PDF (3/7 Pages) Dynex Semiconductor – Fast Recovery Diode Module Preliminary Information | |||
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DFM300MXS18-A000
STATIC ELECTRICAL CHARACTERISTICS - PER ARM
Tvj = 25ËC unless stated otherwise.
Symbol
Parameter
Test Conditions
IRM
Peak reverse current
V
Forward voltage
F
L
Inductance
VR = 1800V, Tvj = 125ËC
IF = 300A
IF = 300A, Tvj = 125ËC
-
DYNAMIC ELECTRICAL CHARACTERISTICS
Tvj = 25ËC unless stated otherwise.
Symbol
Parameter
Irr
Peak reverse recovery current
Qrr
Reverse recovery charge
E
Reverse recovery energy
rec
Test Conditions
I = 300A,
F
dIF/dt = 2000A/µs,
VR = 900V
Tvj = 125ËC unless stated otherwise.
Symbol
Parameter
Irr
Peak reverse recovery current
Q
Reverse recovery charge
rr
Erec
Reverse recovery energy
Test Conditions
IF = 300A,
dIF/dt = 2000A/µs,
VR = 900V
Min. Typ. Max. Units
-
-
5
mA
-
2.0
2.3
V
-
2.0
2.3
V
-
30
-
nH
Min.
-
-
-
Typ.
220
80
60
Max. Units
-
A
-
µC
-
mJ
Min. Typ. Max. Units
-
255
-
A
-
135
-
µC
-
90
-
mJ
3/7
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