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| DFM200XXM65-F000_15 Datasheet, PDF (3/6 Pages) Dynex Semiconductor – Fast Recovery Dual Diode Module | |||
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STATIC ELECTRICAL CHARACTERISTICS â PER ARM
Tcase = 25°C unless stated otherwise.
Symbol
Parameter
IRM Peak reverse current
VF Forward voltage
LM Inductance
Test Conditions
VR = 6500V, Tj = 125°C
IF = 200A
IF = 200A, Tj = 125°C
-
DFM200XXM65-F000
Min Typ Max Units
20 mA
3.6
V
4.1
V
40
nH
STATIC ELECTRICAL CHARACTERISTICS
Tcase = 25°C unless stated otherwise.
Symbol
LM
RINT
Parameter
Module inductance
(externally connected in parallel)
Internal resistance (per arm)
Test Conditions
-
-
Min Typ Max Units
20
nH
370
μâ¦
DYNAMIC ELECTRICAL CHARACTERISTICS â PER ARM
Tcase = 25°C unless stated otherwise
Symbol
Parameter
Qrr Reverse recovery charge
Irr
Peak reverse recovery current
Erec Reverse recovery energy
Test Conditions
IF = 200A
VR = 3600V
dIF/dt = 650A/μs
Tcase = 125°C unless stated otherwise
Symbol
Parameter
Qrr Reverse recovery charge
Irr
Peak reverse recovery current
Erec Reverse recovery energy
Test Conditions
IF = 200A
VR = 3600V
dIF/dt = 800A/μs
Min Typ. Max Units
350
μC
150
A
650
mJ
Min Typ. Max Units
500
μC
185
A
1000
mJ
3/6
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