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| DFM1200XXM45-TS000_15 Datasheet, PDF (3/6 Pages) Dynex Semiconductor – Fast Recovery Diode Module | |||
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STATIC ELECTRICAL CHARACTERISTICS â PER ARM
Tcase = 25°C unless stated otherwise.
Symbol
Parameter
IRM Peak reverse current
VF Forward voltage
LM Inductance
Test Conditions
VR = 4500V, Tj = 125°C
IF = 1200A
IF = 1200A, Tj = 125°C
-
DFM1200XXM45-TS000
Min Typ Max Units
90 mA
2.8
V
3.2
V
40
nH
DYNAMIC ELECTRICAL CHARACTERISTICS â PER ARM
Tcase = 25°C unless stated otherwise (when used with DIM1200ASM45-TS000)
Symbol
Parameter
Qrr Reverse recovery charge
Irr
Peak reverse recovery current
Erec Reverse recovery energy
Test Conditions
IF = 1200A
VR =2800V
dIF/dt = 3000A/μs
Min Typ. Max Units
1340
μC
1030
A
2200
mJ
Tcase = 125°C unless stated otherwise (when used with DIM1200ASM45-TS000)
Symbol
Parameter
Qrr Reverse recovery charge
Irr
Peak reverse recovery current
Erec Reverse recovery energy
Test Conditions
IF = 1200A
VR = 2800V
dIF/dt = 3200A/μs
Min Typ. Max Units
2200
μC
1100
A
3750
mJ
3/6
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