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| DFM1200NXM33-A000_10 Datasheet, PDF (3/6 Pages) Dynex Semiconductor – Fast Recovery Diode Module | |||
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STATIC ELECTRICAL CHARACTERISTICS â PER ARM
Tcase = 25°C unless stated otherwise.
Symbol
Parameter
IRM Peak reverse current
VF Forward voltage
LM Inductance
Test Conditions
VR = 3300V, Tj = 125°C
IF = 1200A
IF = 1200A, Tj = 125°C
-
DFM1200NXM33-A000
Min Typ Max Units
90 mA
2.5
V
2.5
V
25
nH
DYNAMIC ELECTRICAL CHARACTERISTICS â PER ARM
Tcase = 25°C unless stated otherwise
Symbol
Parameter
Qrr Reverse recovery charge
Irr
Peak reverse recovery current
Erec Reverse recovery energy
Test Conditions
IF = 1200A
VR = 1800V
dIF/dt = 5600A/μs
Tcase = 125°C unless stated otherwise
Symbol
Parameter
Qrr Reverse recovery charge
Irr
Peak reverse recovery current
Erec Reverse recovery energy
Test Conditions
IF = 1200A
VR = 1800V
dIF/dt = 4500A/μs
Min Typ. Max Units
650
μC
1000
A
750
mJ
Min Typ. Max Units
1000
μC
1050
A
1250
mJ
3/6
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