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| DFM1200NXM33-A000 Datasheet, PDF (3/7 Pages) Dynex Semiconductor – Fast Recovery Diode Module Preliminary Information | |||
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DFM1200NXM33-A000
STATIC ELECTRICAL CHARACTERISTICS - PER ARM
Tvj = 25ËC unless stated otherwise.
Symbol
Parameter
Test Conditions
IRM
Peak reverse current
V
Forward voltage
F
L
Inductance
VR = 3300V, Tvj = 125ËC
IF = 1200A
IF = 1200A, Tvj = 125ËC
-
DYNAMIC ELECTRICAL CHARACTERISTICS - PER ARM
Tvj = 25ËC unless stated otherwise.
Symbol
Parameter
Test Conditions
Irr
Peak reverse recovery current
Qrr
Reverse recovery charge
E
Reverse recovery energy
rec
I = 1200A,
F
dIF/dt = 5600A/µs,
VR = 1800V
Tvj = 125ËC unless stated otherwise.
Symbol
Parameter
Irr
Peak reverse recovery current
Q
Reverse recovery charge
rr
Erec
Reverse recovery energy
Test Conditions
IF = 1200A,
dIF/dt = 4500A/µs,
VR = 1800V
Min. Typ. Max. Units
-
-
90 mA
-
2.5
-
V
-
2.5
-
V
-
25
-
nH
Min. Typ. Max. Units
-
1000
-
A
-
650
-
µC
-
750
-
mJ
Min. Typ. Max. Units
-
1050
-
A
-
1000
-
µC
-
1250
-
mJ
3/7
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