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| DFM1200FXM18-A000_15 Datasheet, PDF (3/6 Pages) Dynex Semiconductor – Fast Recovery Diode Module | |||
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STATIC ELECTRICAL CHARACTERISTICS â PER ARM
Tcase = 25°C unless stated otherwise.
Symbol
Parameter
IRM Peak reverse current
VF Forward voltage
LM Inductance
Test Conditions
VR = 1800V, Tj = 125°C
IF = 1200A
IF = 1200A, Tj = 125°C
DFM1200FXM18-A000
Min Typ Max Units
20 mA
2.0 2.3
V
2.0 2.3
V
20
nH
STATIC ELECTRICAL CHARACTERISTICS
Tcase = 25°C unless stated otherwise.
Symbol
LM
Parameter
Module inductance
(externally connected in parallel)
Test Conditions
Min Typ Max Units
15
nH
DYNAMIC ELECTRICAL CHARACTERISTICS â PER ARM
Tcase = 25°C unless stated otherwise
Symbol
Parameter
Qrr Reverse recovery charge
Irr
Peak reverse recovery current
Erec Reverse recovery energy
Test Conditions
IF = 1200A
VR = 900V
dIF/dt = 8000A/μs
Tcase = 125°C unless stated otherwise
Symbol
Parameter
Qrr Reverse recovery charge
Irr
Peak reverse recovery current
Erec Reverse recovery energy
Test Conditions
IF = 1200A
VR = 900V
dIF/dt = 8000A/μs
Min Typ. Max Units
320
μC
880
A
240
mJ
Min Typ. Max
540
1020
360
Units
μC
A
mJ
3/6
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