 English |
|
|
|
|
|
|
|
| DFM1200FXM18-A000 Datasheet, PDF (3/7 Pages) Dynex Semiconductor – Fast Recovery Diode Module Preliminary Information | |||
| |||
| ◁ |
DFM1200FXM18-A000
STATIC ELECTRICAL CHARACTERISTICS - PER ARM
Tvj = 25ËC unless stated otherwise.
Symbol
Parameter
Test Conditions
IRM
Peak reverse current
V
Forward voltage
F
L
Inductance
VR = 1800V, Tvj = 125ËC
IF = 1200A
IF = 1200A, Tvj = 125ËC
-
STATIC ELECTRICAL CHARACTERISTICS
Tvj = 25ËC unless stated otherwise.
Symbol
Parameter
L
Module inductance
M
(externally connected in parallel)
Test Conditions
-
DYNAMIC ELECTRICAL CHARACTERISTICS - PER ARM
Tvj = 25ËC unless stated otherwise.
Symbol
Parameter
Test Conditions
Irr
Peak reverse recovery current
Qrr
Reverse recovery charge
E
Reverse recovery energy
rec
IF = 1200A,
dIF/dt = 8000A/µs,
V = 900V
R
Tvj = 125ËC unless stated otherwise.
Symbol
Parameter
Irr
Peak reverse recovery current
Qrr
Reverse recovery charge
E
Reverse recovery energy
rec
Test Conditions
I = 1200A,
F
dIF/dt = 8000A/µs,
VR = 900V
Min. Typ. Max. Units
-
-
20 mA
-
2.0
2.3
V
-
2.0
2.3
V
-
20
-
nH
Min.
-
Typ.
15
Max. Units
-
nH
Min.
-
-
-
Typ.
880
320
240
Max. Units
-
A
-
µC
-
mJ
Min. Typ. Max. Units
-
1020
-
A
-
540
-
µC
-
360
-
mJ
3/7
www.dynexsemi.com
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese