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| DFM1200EXM12-A000 Datasheet, PDF (3/7 Pages) Dynex Semiconductor – Fast Recovery Diode Module Preliminary Information | |||
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DFM1200EXM12-A000
STATIC ELECTRICAL CHARACTERISTICS - PER ARM
Tvj = 25ËC unless stated otherwise.
Symbol
Parameter
Test Conditions
IRM
Peak reverse current
V
Forward voltage
F
L
Inductance
VR = 1200V, Tvj = 125ËC
IF = 1200A
IF = 1200A, Tvj = 125ËC
-
STATIC ELECTRICAL CHARACTERISTICS
Tvj = 25ËC unless stated otherwise.
Symbol
Parameter
L
Module inductance
M
(externally connected in parallel)
Test Conditions
-
DYNAMIC ELECTRICAL CHARACTERISTICS - PER ARM
Tvj = 25ËC unless stated otherwise.
Symbol
Parameter
Test Conditions
Irr
Peak reverse recovery current
Qrr
Reverse recovery charge
E
Reverse recovery energy
rec
IF = 1200A,
dIF/dt = 9000A/µs,
V = 600V
R
Tvj = 125ËC unless stated otherwise.
Symbol
Parameter
Irr
Peak reverse recovery current
Qrr
Reverse recovery charge
E
Reverse recovery energy
rec
Test Conditions
I = 1200A,
F
dIF/dt = 8400A/µs,
VR = 600V
Min. Typ. Max. Units
-
-
20 mA
-
1.9
2.2
V
-
2.1
2.4
V
-
TBD
-
nH
Min. Typ. Max. Units
-
15
-
nH
Min.
-
-
-
Typ.
800
200
80
Max. Units
-
A
-
µC
-
mJ
Min. Typ. Max. Units
-
920
-
A
-
300
-
µC
-
140
-
mJ
3/7
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