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| DFM1000NXM33-TS000 Datasheet, PDF (3/6 Pages) Dynex Semiconductor – Fast Recovery Diode Module | |||
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STATIC ELECTRICAL CHARACTERISTICS â PER ARM
Tcase = 25°C unless stated otherwise.
Symbol
Parameter
IRM Peak reverse current
VF Forward voltage
LM Inductance
Test Conditions
VR = 3300V, Tj = 150°C
IF = 1000A
IF = 1000A, Tj = 125°C
IF = 1000A, Tj = 150°C
-
DFM1000NXM33-TS000
Min Typ Max Units
60 mA
2.4
V
2.5
V
2.4
V
25
nH
DYNAMIC ELECTRICAL CHARACTERISTICS â PER ARM
Tcase = 25°C unless stated otherwise
Symbol
Parameter
Qrr Reverse recovery charge
Irr
Peak reverse recovery current
Erec Reverse recovery energy
Test Conditions
IF = 1000A
VR = 1800V
dIF/dt = 2700A/μs
Tcase = 125°C unless stated otherwise
Symbol
Parameter
Qrr Reverse recovery charge
Irr
Peak reverse recovery current
Erec Reverse recovery energy
Test Conditions
IF = 1000A
VR = 1800V
dIF/dt = 2700A/μs
Tcase = 150°C unless stated otherwise
Symbol
Parameter
Qrr Reverse recovery charge
Irr
Peak reverse recovery current
Erec Reverse recovery energy
Test Conditions
IF = 1000A
VR = 1800V
dIF/dt = 2700A/μs
Min Typ. Max Units
570
μC
615
A
670
mJ
Min Typ. Max Units
935
μC
775
A
1150
mJ
Min Typ. Max Units
1070
μC
800
A
1300
mJ
3/6
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