DCR860D18 Datasheet, PDF (3/9 Pages) Dynex Semiconductor – Phase Control Thyristor

SEMICONDUCTOR
DYNAMIC CHARACTERISTICS
DCR860D18
Symbol
Parameter
Test Conditions
Min. Max. Units
IRRM/IDRM Peak reverse and off-state current
At VRRM/VDRM, Tcase = 125°C
dV/dt Max. linear rate of rise of off-state voltage To 67% VDRM, Tj = 125°C, gate open
dI/dt Rate of rise of on-state current
From 67% VDRM to 1000A Repetitive 50Hz
Gate source 30V, 10,
Non-repetitive
tr < 0.5µs, Tj = 125°C
VT
On-state voltage
IT = 1500A, Tcase = 125°C
VT(TO) Threshold voltage
Tcase = 125°C
rT
On-state slope resistance
Tcase = 125°C
tgd
Delay time
VD = 67% VDRM, gate source 30V, 10
tr = 0.5µs, Tj = 25°C
tq
Turn-off time
Tj = 125°C, VR = 100V, dI/dt = 10A/µs,
dVDR/dt = 20V/µs linear to 67% VDRM
QS
Stored charge
IRR
Reverse recovery current
IL
Latching current
IT = 1000A, tp = 1000us,Tj = 125°C,
dI/dt =10A/µs,
Tj = 25°C,
-
1000
-
-
-
-
-
-
-
-
-
50
-
200
1000
1.65
0.90
0.50
3.0
150
1500
105
1
IH
Holding current
Tj = 25°C,
-
200
mA
V/µs
A/µs
A/µs
V
V
m
µs
µs
µC
A
A
mA
GATE TRIGGER CHARACTERISTICS AND RATINGS
Symbol
Parameter
VGT
Gate trigger voltage
VGD
Gate non-trigger voltage
IGT
Gate trigger current
IGD
Gate non-trigger current
Test Conditions
VDRM = 5V, Tcase = 25°C
At 40% VDRM, Tcase = 125°C
VDRM = 5V, Tcase = 25°C
At 40% VDRM, Tcase = 125°C
Max. Units
3
V
TBD
V
300 mA
TBD mA
3/9
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