DCR5890H52_15 Datasheet, PDF (3/10 Pages) Dynex Semiconductor – Phase Control Thyristor

SEMICONDUCTOR
DYNAMIC CHARACTERISTICS
DCR5890H52
Symbol
Parameter
Test Conditions
Min. Max. Units
IRRM/IDRM Peak reverse and off-state current
At VRRM/VDRM, Tcase = 125°C
-
600
mA
dV/dt Max. linear rate of rise of off-state voltage To 67% VDRM, Tj = 125°C, gate open
-
2000 V/µs
dI/dt Rate of rise of on-state current
From 67% VDRM to 2x IT(AV) Repetitive 50Hz
-
200 A/µs
Gate source 30V, 10,
Non-repetitive
-
500 A/µs
tr < 0.5µs, Tj = 125°C
VT(TO) Threshold voltage – Low level
500 to 4000A at Tcase = 125°C
-
0.845
V
Threshold voltage – High level
4000 to 8000A at Tcase = 125°C
-
1.15
V
rT
On-state slope resistance – Low level
500A to 4000A at Tcase = 125°C
-
0.155 m
On-state slope resistance – High level
4000A to 8000A at Tcase = 125°C
-
0.093 m
tgd
Delay time
tq
Turn-off time
VD = 67% VDRM, gate source 30V, 10
tr = 0.5µs, Tj = 25°C
IT = 3000A, Tj = 125°C,
VR = 200V, dI/dt = 1A/µs,
dVDR/dt = 20V/µs linear
-
3
µs
700
µs
QS
Stored charge
IRR
Reverse recovery current
IT = 3000A, Tj = 125°C, dI/dt – 1A/µs,
VRpeak ~3100V, VR ~ 2100V
3260 8185 µC
45
77
A
IL
Latching current
IH
Holding current
Tj = 25°C, VD = 5V
Tj = 25°C, RG-K = , ITM = 500A, IT = 5A
-
3
A
-
300
mA
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