DCR4880M42 Datasheet, PDF (3/10 Pages) Dynex Semiconductor – Phase Control Thyristor

SEMICONDUCTOR
DCR4880M42
DYNAMIC CHARACTERISTICS
Symbol
Parameter
Test Conditions
Min. Max. Units
IRRM/IDRM Peak reverse and off-state current
At VRRM/VDRM, Tcase = 125°C
-
300
mA
dV/dt Max. linear rate of rise of off-state voltage To 67% VDRM, Tj = 125°C, gate open
-
2000 V/µs
dI/dt Rate of rise of on-state current
From 67% VDRM to 2x IT(AV) Repetitive 50Hz
-
200 A/µs
Gate source 30V, 10 ,
Non-repetitive
-
500 A/µs
tr < 0.5µs, Tj = 125°C
VT(TO) Threshold voltage – Low level
500 to 2200A at Tcase = 125°C
-
0.75
V
Threshold voltage – High level
2200 to 8000A at Tcase = 125°C
-
0.92
V
rT
On-state slope resistance – Low level
500 to 2200A at Tcase = 125°C
-
0.205 m
On-state slope resistance – High level
2200 to 8000A at Tcase = 125°C
-
0.122 m
tgd
Delay time
tq
Turn-off time
VD = 67% VDRM, gate source 30V, 10
tr = 0.5µs, Tj = 25°C
Tj = 125°C, 5000A
VR = 200V, dI/dt = 5 A/µs,
dVDR/dt = 20V/µs linear
-
3
µs
900
µs
QS
Stored charge
IRR
Reverse recovery current
IT = 3000A, Tj = 125°C, dI/dt – 1A/µs,
VRpeak ~3100V, VR ~ 2100V
2920 4875
µC
42
57
A
IL
Latching current
IH
Holding current
Tj = 25°C, VD = 5V
Tj = 25°C, RG-K = , ITM = 500A, IT = 5A
-
3
A
-
300
mA
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