DCR2220Y65_15 Datasheet, PDF (3/10 Pages) Dynex Semiconductor – Phase Control Thyristor

SEMICONDUCTOR
DCR2220Y65
DYNAMIC CHARACTERISTICS
Symbol
Parameter
Test Conditions
Min. Max. Units
IRRM/IDRM Peak reverse and off-state current
At VRRM/VDRM, Tcase = 125°C
dV/dt Max. linear rate of rise of off-state voltage To 67% VDRM, Tj = 125°C, gate open
dI/dt Rate of rise of on-state current
From 67% VDRM to 2x IT(AV) Repetitive 50Hz
Gate source 30V, 10,
Non-repetitive
tr < 0.5µs, Tj = 125°C
VT(TO) Threshold voltage – Low level
500A to 3000A at Tcase = 125°C
Threshold voltage – High level
3000A to 7200A at Tcase = 125°C
rT
On-state slope resistance – Low level
500A to 3000A at Tcase = 125°C
On-state slope resistance – High level
3000A to 7200A at Tcase = 125°C
tgd
Delay time
VD = 67% VDRM, gate source 30V, 10
tr = 0.5µs, Tj = 25°C
tq
Turn-off time
Tj = 125°C, VR = 200V, dI/dt = 1A/µs,
dVDR/dt = 20V/µs linear
QS
Stored charge
IT = 2000A, Tj = 125°C, dI/dt – 1A/µs,
IL
Latching current
Tj = 25°C, VD = 5V
-
-
-
-
-
-
-
-
-
-
2400
-
300
1500
150
300
1.0
1.237
0.4286
0.3518
3
1200
6000
3
mA
V/µs
A/µs
A/µs
V
V
m
m
µs
µs
µC
A
IH
Holding current
Tj = 25°C, RG-K = , ITM = 500A, IT = 5A
-
300
mA
3/10
www.dynexsemi.com