TF666 Datasheet, PDF (2/13 Pages) Dynex Semiconductor – Fast Switching Thyristor

TF666..A
SURGE RATINGS
Symbol
Parameter
I
Surge (non-repetitive) on-state current
TSM
I²t
I²t for fusing
Conditions
10ms half sine; V = 0% V , T = 125˚C
R
RRM j
10ms half sine; V_R = 0% V_RRM, T_j = 125˚C
Max. Units
9.0
kA
405.0 x 10³ A²s
THERMAL AND MECHANICAL DATA
Symbol
Parameter
R_th(j-c)
Thermal resistance - junction to case
R_th(c-h)
Thermal resistance - case to heatsink
T
Virtual junction temperature
vj
T
Storage temperature range
stg
-
Clamping force
Conditions
Double side cooled
dc
Single side cooled
Anode dc
Cathode dc
Clamping force 10.0kN
with mounting compound
Double side
Single side
On-state (conducting)
Reverse (blocking)
Min. Max. Units
-
0.05 ^oC/W
- 0.095 ^oC/W
-
0.11 ^oC/W
-
0.01 ^oC/W
-
0.02 ^oC/W
-
125
o_C
-
125
o_C
-40 150
o_C
9.5 10.5 kN
MEASUREMENT OF RECOVERED CHARGE - Q_RA1
Measurement of Q_RA1 : Q_RA1 = I_RR x t_RR
2
I_TM
t_p = 1ms
dI_R/dt
Q_RA1
0.5x I_RR
I_RR
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