SV10 Datasheet, PDF (2/7 Pages) Dynex Semiconductor – Rectifier Diode

SV10
SURGE RATINGS
Symbol
Parameter
I
Surge (non-repetitive) forward current
FSM
I²t
I²t for fusing
I
Surge (non-repetitive) forward current
FSM
I²t
I²t for fusing
Conditions
10ms half sine; T = 175^oC
case
V_R = 50% V_RRM - 1/4 sine
10ms half sine; T_case =175^oC
V_R = 0
Max. Units
1.76
kA
14.9 x 10³ A²s
2.2
kA
24.0 x 10³ A²s
THERMAL AND MECHANICAL DATA
Symbol
Parameter
R_th(j-c)
R_th(c-h)
Thermal resistance - junction to case
Thermal resistance - case to heatsink
T
Virtual junction temperature
vj
T_stg
Storage temperature range
-
Mounting Torque
Conditions
dc
Mounting torque 15.0Nm
with mounting compound
On-state (conducting)
Reverse (blocking)
Min. Max. Units
-
0.23 ^oC/W
-
0.08 ^oC/W
-
175
o_C
-
175
o_C
-55 200
o_C
12.0 15.0 Nm
CHARACTERISTICS
Symbol
Parameter
V
Forward voltage
FM
I_RRM
Peak reverse current
Q_S
Total stored charge
I_RM
Peak recovery current
t_rr
reverse recovery time
V
Threshold voltage
TO
r
Slope resistance
T
*Typical values.
Conditions
At 300A peak, T = 25^oC
case
At V_RRM, T_case = 175^oC
I
F
=
100A,
dI /dt
RR
=
20A/µs,
T
case
=
25˚C
At T = 175˚C
vj
At T = 175˚C
vj
Typ. Max. Units
-
1.5
V
-
20 mA
300* -
µC
100* -
A
6.5*
-
µs
-
1.1
V
-
1.3 mΩ
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