GDU90-20301 Datasheet, PDF (2/4 Pages) Dynex Semiconductor – Gate Drive Unit

GDU 90 20301
TIMING CHARACTERISTICS
Symbol
t *^†
1
t
2
t₃*^†
t₄
t₅*
t₆
t
7
t₈*
t₉
t₁₀
t
11
t₁₂
Parameter
No response pulse width of
input signal
Delay time emitter
current to receiver o/p
Turn-on delay emitter
current to 10% I_FGM
I_FGM pulse width
Minimum on time
10% I to 90% I
FGM
G(ON)
Receiver storage time
Turn-off delay.
Emitter current to 90% I_G(ON)
Minimum off time
90% I_G(ON) to 10% I_FGM
Delay time
Gate volts to o/p emitter current
Turn-off delay
Gate volts to test receiver o/p
Storage time
Gate volts to o/p emitter current
Turn-on delay
Gate volts to test receiver o/p
* t₁,t₃,t₅,t₈ are factory settings. ^† Adjustment of t₁ alters t₃
Conditions
Adjustable by R81 + R82
Min. Typ. Max. Units
2
-
3
µs
-
0.2
-
0.4
µs
-
-
Adjustable by R37
-
-
5.0
-
5.8
µs
-
16
-
µs
80
-
110 µs
0.8
-
1.2
µs
1.5
-
2.3
µs
Adjustable by R38
80
-
110 µs
-
-
0.2
-
µs
-
-
0.8
-
µs
Measured at low I_GQM
-
0.1¹
-
µs
Measured at low I_GQM
-
0.3¹
-
µs
1. Varies with I_GQM due to gate lead impedance.
Test circuit
t₁
emitter current
t₂
t₆
Control card
receiver output
10µs
Gate current
dI_FG/dt
t₃
0V
Gate voltage
Control card emitter current
10%
t₄
t₅
Min. ON time
dI_GQ/dt
-8V
t₉
t₇
90% I_G(ON)
Q_GQT
t₈
Min. OFF
-8V
t₁₁
Test circuit receiver output
t₁₀
t₁₂
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