DSF20060SF Datasheet, PDF (2/6 Pages) Dynex Semiconductor – Fast Recovery Diode

DSF20060SF
SURGE RATINGS
Symbol
Parameter
I
Surge (non-repetitive) forward current
FSM
I²t
I²t for fusing
I_FSM
Surge (non-repetitive) forward current
I²t
I²t for fusing
Conditions
10ms half sine; with 0% V_RRM, T_j = 125^oC
10ms half sine; with 50% V_RRM, T_j = 125^oC
Max. Units
7.8
kA
300 x 10³ A²s
6.4
kA
205 x 10³ A²s
THERMAL AND MECHANICAL DATA
Symbol
Parameter
R_th(j-c) Thermal resistance - junction to case
R_th(c-h) Thermal resistance - case to heatsink
T_vj
Virtual junction temperature
T_stg
Storage temperature range
-
Clamping force
Conditions
Double side cooled
dc
Single side cooled
Anode dc
Cathode dc
Clamping force 19.5kN
with mounting compound
Double side
Single side
On-state (conducting)
Min. Max. Units
- 0.022 ^oC/W
- 0.039 ^oC/W
- 0.050 ^oC/W
- 0.004 ^oC/W
- 0.008 ^oC/W
-
125
o_C
-55 150
o_C
18.0 22.0 kN
CHARACTERISTICS
Symbol
Parameter
V
Forward voltage
FM
I
Peak reverse current
RRM
t_rr
Reverse recovery time
Q_RA1
Recovered charge (50% chord)
I_RM
Reverse recovery current
K
Soft factor
V_TO
r_T
V_FRM
Threshold voltage
Slope resistance
Forward recovery voltage
Conditions
At 1500A peak, T = 25^oC
case
At V , T = 125oC
RRM case
I_F = 1000A, di_RR/dt = 100A/µs
T_case = 125^oC, V_R = 100V
At T_vj = 125^oC
At T_vj = 125^oC
di/dt = 1000A/µs, T_j = 100^oC
Typ. Max. Units
-
3.9
V
-
75 mA
-
6.5
µs
- 1400 µC
-
450
A
1.8
-
-
-
2.2
V
-
1.24 mΩ
-
260
V
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