DFS454 Datasheet, PDF (2/8 Pages) Dynex Semiconductor – Fast Recovery Diode

DFS454
SURGE RATINGS
Symbol
Parameter
I
Surge (non-repetitive) forward current
FSM
I²t
I²t for fusing
I_FSM
Surge (non-repetitive) forward current
I²t
I²t for fusing
I
Surge (non-repetitive) forward current
FSM
I²t
I²t for fusing
Conditions
10ms half sine; with 0% V_RRM, T_j = 150^oC
10ms half sine; with 50% V_RRM, T_j = 150^oC
10ms half sine; with 100% V_RRM, T_j = 150^oC
Max. Units
3.5
kA
61 x 10³ A²s
2.8
kA
39.2 x 10³ A²s
-
kA
-
A²s
THERMAL AND MECHANICAL DATA
Symbol
Parameter
R_th(j-c) Thermal resistance - junction to case
R_th(c-h) Thermal resistance - case to heatsink
T_vj
Virtual junction temperature
T_stg
Storage temperature range
-
Clamping force
CHARACTERISTICS
Symbol
Parameter
V_FM
Forward voltage
I_RRM
Peak reverse current
t
rr
Reverse recovery time
Q_RA1
Recovered charge (50% chord)
I_RM
Reverse recovery current
K
Soft factor
V
TO
r_T
V_FRM
2/8
Threshold voltage
Slope resistance
Forward recovery voltage
Conditions
Double side cooled
dc
Single side cooled
Anode dc
Cathode dc
Clamping force 3.5kN
with mounting compound
Double side
Single side
On-state (conducting)
Min. Max. Units
-
0.07 ^oC/W
-
0.133 ^oC/W
- 0.147 ^oC/W
-
0.02 ^oC/W
-
0.04 ^oC/W
-
150
o_C
-55 175
o_C
3.0 4.0 kN
Conditions
At 1000A peak, T_case = 25^oC
At V_RRM, T_case = 150^oC
I_F = 750A, di_RR/dt = 100A/µs
T_case = 125^oC, V_R = 100V
At T_vj = 150^oC
At T_vj = 150^oC
di/dt = 1000A/µs, T_j = 125^oC
Typ. Max. Units
-
3.1
V
-
50 mA
2.0
-
µs
-
200 µC
150
-
A
1.3
-
-
-
1.64 V
-
1.54 mΩ
-
120
V