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| DFM1200FXM12-A000 Datasheet, PDF (2/7 Pages) Dynex Semiconductor – Fast Recovery Diode Module Preliminary Information | |||
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DFM1200FXM12-A000
ABSOLUTE MAXIMUM RATINGS - PER ARM
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme
conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety
precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.
Tcase = 25ËC unless stated otherwise
Symbol
Parameter
VRRM
IF
I
FM
I2t
Repetitive peak reverse voltage
Forward current (per arm)
Max. forward current
I2t value fuse current rating
Pmax Maximum power dissipation
Visol
Isolation voltage
Qpd
Partial discharge
Test Conditions
T = 125ËC
vj
DC, Tcase = 75ËC
Tcase = 110ËC, tp = 1ms
VR = 0, tp = 10ms, Tvj = 125ËC
Tcase = 25ËC, Tvj = 125ËC
Commoned terminals to base plate. AC RMS, 1 min, 50Hz
IEC1287. V1 = 1200V, V2 = 900V, 50Hz RMS
Max. Units
1200 V
1200 A
2400 A
200 kA2s
5000 W
4
kV
10 pC
THERMAL AND MECHANICAL RATINGS
Internal insulation:
AlN
Baseplate material:
AlSiC
Creepage distance:
20mm
Clearance:
10mm
CTI (Critical Tracking Index): 175
Symbol
Parameter
Rth(j-c)
Thermal resistance - diode (per arm)
R
th(c-h)
Tj
Tstg
-
Thermal resistance - case to heatsink
(per module)
Junction temperature
Storage temperature range
Screw torque
Test Conditions
Continuous dissipation -
junction to case
Mounting torque 5Nm
(with mounting grease)
-
-
Mounting - M6
Electrical connections - M8
Min.
-
Typ.
-
Max. Units
20 ËC/kW
-
-
8 ËC/kW
-
-
125 ËC
â40
-
125 ËC
-
-
5
Nm
-
-
10 Nm
2/7
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