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DFM100PXM33-F000_15 Datasheet, PDF (2/6 Pages) Dynex Semiconductor – Fast Recovery Diode Module
DFM100PXM33-F000
ABSOLUTE MAXIMUM RATINGS
Stresses above those listed under ‘Absolute Maximum Ratings’ may cause permanent damage to the device. In
extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package.
Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect
device reliability.
Tcase = 25°C unless stated otherwise
Symbol
Parameter
VRRM
IF
IFM
I2t
Repetitive peak reverse voltage
Forward current (per arm)
Max. forward current (per arm)
I2t value fuse current rating
Pmax Max. power dissipation
Visol Isolation voltage – per module
QPD Partial discharge – per module
VRRM DC DC Voltage stability
Test Conditions
Tj = 125°C
DC, Tcase = 70°C
Tcase = 105°C, tp = 1ms
VR = 0, tp = 10ms, Tj = 125°C
Tcase = 25°C, Tj = 125°C
Commoned terminals to base plate.
AC RMS, 1 min, 50Hz
IEC1287, V1 = 3500V, V2 = 2600V, 50Hz RMS
25°C at sea level, 100 FITs
Max. Units
3300 V
100
A
200
A
5
kA2s
521
W
6000 V
10
pC
2200 V
THERMAL AND MECHANICAL RATINGS
Internal insulation material:
AlN
Baseplate material:
AlSiC
Creepage distance:
33mm
Clearance:
20mm
CTI (Comparative Tracking Index):
>600
Symbol
Parameter
Rth(j-c)
Rth(c-h)
Tj
Tstg
Thermal resistance (per arm)
Thermal resistance –
case to heatsink (per module)
Junction temperature
Storage temperature range
Screw Torque
Test Conditions
Continuous dissipation –
junction to case
Mounting torque 5Nm
(with mounting grease)
Mounting – M6
Electrical connections – M5
Min Typ. Max Units
-
-
192 °C/kW
-
-
16 °C/kW
-40
-
125
°C
-40
-
125
°C
-
-
5
Nm
-
-
4
Nm
2/6
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