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DG406BP25 Datasheet, PDF (14/19 Pages) Dynex Semiconductor – Gate Turn-off Thyristor | |||
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DG406BP25
2.00
1.75
Conditions:
CS = 1.0µF,
IT = 1000A
1.50
Tj = 125ËC
1.25
1.00
10
Tj = 25ËC
20
30
40
50
60
Rate of rise of reverse gate current dIGQ/dt - (A/µs)
FigF.2I3GG2a3teGfaAllTtiEmFeAvsLLraTteIMofErise RofArTevEerOsFe gRaItSeEcuOrFrent
500
Conditions:
CS = 1.0µF,
dIGQ/dt = 30A/µs
400
Tj = 125ËC
Tj = 25ËC
300
200
100
0
250
500
750
1000
1250
Turn-off current IT - (A)
Fig.24 Peak reverse gate current vs turn-off current
1500
14/19
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