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DG406BP25_05 Datasheet, PDF (12/19 Pages) Dynex Semiconductor – Gate Turn-off Thyristor | |||
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DG406BP25
2500
2000
Conditions:
Tj = 125ËC,
VDM = VDRM,
dIGQ/dt = 30A/µs
1500
1000
CS = 0.5µF
CS = 1.0µF
CS = 1.5µF
CS = 2.0µF
500
0
0
250
500
750
1000
1250
On-state current IT - (A)
FIG 19 TURN OFF ENERGY ON STATE CURRENT
Fig.19 Turn-off energy vs on-state current
2.0
Conditions:
CS = 1.0µF,
dIGQ/dt = 30A/µs
1.5
Tj = 125ËC
1500
1.0
Tj = 25ËC
0.5
12/19
0
0
250
500
750
1000
1250
1500
On-state current IT - (A)
Fig.20 Gate fall time vs on-state current
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