TA329Q Datasheet, PDF (1/10 Pages) Dynex Semiconductor – Asymmetric Thyristor

Replaces March 1998 version, DS4680-2.1
APPLICATIONS
s High Frequency Applications
s High Power Choppers And Inverters
s Welding
s Ultrasonic Generators
s Induction Heating
s 400Hz UPS
s PWM Inverters
FEATURES
s Low Loss Asymmetrical Diffusion Structure
s High Interdigitated Amplifying Gate
s Gate Assisted Turn-off With Exclusive Bypass Diode
s Fully Characterised For Operation up to 40kHz
s Directly Compatible With 220-480 A.c. Mains
VOLTAGE RATINGS
Type Number
TA329 14 Q
TA329 12 Q
TA329 10 Q
Repetitive Peak
Off-state Voltage
V
DRM
V
1400
1200
1000
Repetitive Peak
Reverse Voltage
V
RRM
V
10
10
10
TA329..Q
TA329..Q
Asymmetric Thyristor
Advance Information
DS4680-3.0 January 2000
KEY PARAMETERS
V_DRM
I_T(RMS)
I_TSM
dVdt
1400V
370A
2000A
1000V/µs
dI/dt
1000A/µs
t_q
7.0µs
Lower voltage grades available.
CURRENT AND SURGE RATINGS
Symbol
Double Side Cooled
I_T(RMS)
RMS value
Parameter
I_TSM
Surge (non-repetitive) on-state current
I²t
I²t for fusing
Outline type code: MU86.
See Package Details for further information.
Conditions
Max. Units
Half sine wave, duty cycle 50%, T = 80oC,
case
T_j = 125˚C.
T_j = 125^oC, t_p = 1ms, V_R = 0
t
p
≥
10ms
370
A
2000
A
20 x 10³ A²s
1/10