GP801DDM18 Datasheet, PDF (1/10 Pages) Dynex Semiconductor – Hi-Reliability Dual Switch Low VCESAT IGBT Module

GP801DDM18
GP801DDM18
Hi-Reliability Dual Switch Low V_CE(SAT) IGBT Module
Replaces October 2000, version DS5292-2.5
DS5292-3.0 January 2001
FEATURES
s Low V_CE(SAT)
s 800A Per Switch
s High Thermal Cycling Capability
s Non Punch Through Silicon
s Isolated MMC Base with AlN Substrates
KEY PARAMETERS
V_CES
V_CE(sat)
I_C
I
C(PK)
(typ)
(max)
(max)
1800V
2.6V
800A
1600A
APPLICATIONS
s High Reliability
s Motor Controllers
s Traction Drives
s Low Loss System Retrofit
The Powerline range of high power modules includes dual
and single switch configurations covering voltages from 600V to
3300V and currents up to 4800A.
The GP801DDM18 is a dual switch 1800V, n channel
enhancement mode, insulated gate bipolar transistor (IGBT)
module. Designed with low V_CE(SAT) to minimise conduction
losses, the module is of particular relevance in low to medium
frequency applications. The IGBT has a wide reverse bias safe
operating area (RBSOA) ensuring reliability in demanding
applications. This device is optimised for traction drives and
other applications requiring high thermal cycling capability.
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise earthed heat sinks for safety.
ORDERING INFORMATION
Order As:
GP801DDM18
Note: When ordering, please use the complete part number.
12(C²)
2(C₂)
7(C¹)
4(E₂)
1(E₁)
11(G²)
10(E²)
3(C₁)
5(E¹)
6(G¹)
Fig. 1 Dual switch circuit diagram
5
6
3
1
7
8
9
12
4
2
11
10
Outline type code: D
(See Package Details for further information)
Fig. 2 Electrical connections - (not to scale)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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