GP801DCM18 Datasheet, PDF (1/10 Pages) Dynex Semiconductor – Hi-Reliability Chopper Switch Low VCESAT IGBT Module

GP801DCM18
GP801DCM18
Hi-Reliability Chopper Switch Low V_CE(SAT) IGBT Module
DS5365-3.0 January 2001
FEATURES
s Low V_CE(SAT)
s 800A Per Module
s High Thermal Cycling Capability
s Non Punch Through Silicon
s Isolated MMC Base with AlN Substrates
KEY PARAMETERS
V_CES
V_CE(sat)
I_C
I
C(PK)
(typ)
(max)
(max)
1800V
2.6V
800A
1600A
APPLICATIONS
s High Reliability
s Motor Controllers
s Traction Drives
s Low Loss System Retrofit
The Powerline range of high power modules includes dual
and single switch configurations covering voltages from 1200V to
3300V and currents up to 4800A.
The GP801DCM18 is an 1800V, n channel enhancement
mode, insulated gate bipolar transistor (IGBT) chopper module.
Designed with low V_CE(SAT) to minimise conduction losses, the
module is of particular relevance in low to medium frequency
applications. The IGBT has a wide reverse bias safe operating
area (RBSOA) ensuring reliability in demanding applications.
This device is optimised for traction drives and other applications
requiring high thermal cycling capability.
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise earthed heat sinks for safety.
ORDERING INFORMATION
Order As:
GP801DCM18
Note: When ordering, please use the complete part number.
2(C₂)
7(C¹)
4(E₂)
1(E₁)
3(C₁)
5(E¹)
6(G¹)
Fig. 1 Dual switch circuit diagram
GPxxxDCxxx-xxx
Outline type code: D
(See Package Details for further information)
Fig. 2 Electrical connections - (not to scale)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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