GP800DCM18 Datasheet, PDF (1/10 Pages) Dynex Semiconductor – Hi-Reliability Chopper Switch IGBT Module

GP800DCM18
FEATURES
s High Thermal Cycling Capability
s 800A Per Module
s Non Punch Through Silicon
s Isolated MMC Base with AlN Substrates
GP800DCM18
Hi-Reliability Chopper Switch IGBT Module
DS5363-3.0 January 2001
KEY PARAMETERS
V_CES
V_CE(sat)
I_C
I
C(PK)
(typ)
(max)
(max)
1800V
3.5V
800A
1600A
APPLICATIONS
s High Reliability Inverters
s Motor Controllers
s Traction Drives
s Resonant Converters
The Powerline range of high power modules includes dual
and single switch configurations covering voltages from 600V to
3300V and currents up to 4800A.
The GP800DCM18 is an1800V, n channel enhancement
mode, insulated gate bipolar transistor (IGBT) chopper module.
The IGBT has a wide reverse bias safe operating area (RBSOA)
ensuring reliability in demanding applications. This device is
optimised for traction drives and other applications requiring high
thermal cycling capability or very high reliability.
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise earthed heat sinks for safety.
ORDERING INFORMATION
Order As:
GP800DCM18
Note: When ordering, please use the whole part number.
2(C₂)
7(C¹)
4(E₂)
1(E₁)
3(C₁)
5(E¹)
6(G¹)
Fig. 1 Chopper switch circuit diagram
GPxxxDCxxx-xxx
Outline type code: D
(See package details for further information)
Fig. 2 Electrical connections - (not to scale)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
1/10
www.dynexsemi.com