GP1600FSM18 Datasheet, PDF (1/9 Pages) Dynex Semiconductor – Hi-Reliability Single Switch IGBT Module

GP1600FSM18
Replaces May 2000 version, DS5361-1.1
FEATURES
s High Thermal Cycling Capability
s 1600A Per Module
s Non Punch Through Silicon
s Isolated MMC Base with AlN Substrates
GP1600FSM18
Hi-Reliability Single Switch IGBT Module
DS5361-2.3 January 2001
KEY PARAMETERS
V_CES
V_CE(sat)
I_C
I_C(PK)
(typ)
(max)
(max)
1800V
3.5V
1600A
3200A
APPLICATIONS
s High Reliability Inverters
s Motor Controllers
s Traction Drives
s Resonant Converters
The Powerline range of high power modules includes dual
and single switch configurations covering voltages from 1200V to
3300V and currents up to 4800A.
The GP1600FSM18 is a single switch 1800V, n channel
enhancement mode, insulated gate bipolar transistor (IGBT)
module. The IGBT has a wide reverse bias safe operating area
(RBSOA) ensuring reliability in demanding applications. This
device is optimised for traction drives and other applications
requiring high thermal cycling capability or very high reliability.
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise earthed heat sinks for safety.
ORDERING INFORMATION
Order As:
GP1600FSM18
Note: When ordering, please use the whole part number.
Aux C
External connection
C1
C2
G
Aux E
E1
E2
External connection
Fig. 1 Single switch circuit diagram
Aux C
E1
C1
Aux E
G
E2
C2
Outline type code: F
(See package details for further information)
Fig. 2 Electrical connections - (not to scale)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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