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| GDU91-20221 Datasheet, PDF (1/4 Pages) Dynex Semiconductor – Gate Drive Unit | |||
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GDU 91 20221
GDU 91-20221
Gate Drive Unit
Replaces March 1998 version, DS4569-3.1
DS4569-4.0 January 2000
This datasheet should be used in conjunction with the application note AN4571, GDU9X-XXXXX Series, Gate Drive Unit.
APPLICATIONS
KEY PARAMETERS
s Used with Gate Turn-Off Thyristors in high current switching
applications
I
FGM
IG(ON)
dI /dt
GQ
30A
4A
30A/µs
CONDITIONS - (UNLESS STATED OTHERWISE)
V = +5V
1
Test circuit GTO
GDU connection to GTO
Test circuit emitter and gate drive emitter
Test circuit emitter current
Test circuit receiver and gate drive receiver
V = +15V
2
DG408BP
V = -15V
3
500mm CO - AX cable type RC5327230
Hewlett Packard versatile link HFBR1524
30mA
Hewlett Packard versatile link HFBR2524
ELECTRICAL CHARACTERISTICS
Symbol
Parameter
IV1
+5V PSU current
IV2
+15V PSU current
IV3
V1(Min)
V2(Min)
V3(Min)
I
FGM
IG(ON)
dI /dt
FG
dIGQ/dt
-15V PSU current
+5V PSU minimum
+15V PSU minimum
-15V PSU minimum
Peak forward gate current
On-state gate current
Rate of rise of positive gate current
Rate of rise of negative gate current
Conditions
500Hz, 50% duty cycle
500Hz
500Hz, IT = 1000A
GTO T = 125ËC
j
-
-
-
-
-
Measured 10 - 75% IFGM
IT = 1000A, 90% IG(ON) - 50% IGQM
Min. Typ. Max. Units
-
-
2.2
A
-
-
0.55
A
-
-
3.8
-
14.0
-
14.0
-
30
-
-
4
-
30
-
30
3.0
A
-
V
-
V
-
V
-
A
-
A
-
A/µs
-
A/µs
1/4
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