GDU90-20722 Datasheet, PDF (1/4 Pages) Dynex Semiconductor – Gate Drive Unit

GDU 90 20722
GDU 90-20722
Gate Drive Unit
Replaces March 1998 version, DS4568-3.1
DS4568-4.0 January 2000
This datasheet should be used in conjunction with the application note AN4571, GDU9X-XXXXX Series, Gate Drive Unit.
APPLICATIONS
s Used with Gate Turn-Off Thyristors in high current switching
applications
KEY PARAMETERS
I_FGM
I_G(ON)
dI_GQ/dt
40A
10A
50A/µs
CONDITIONS - (UNLESS STATED OTHERWISE)
V₁ = +5V
Test circuit GTO
V₂ = +15V
DG858BW
V₃ = -15V
GDU connection to GTO
Test circuit emitter and gate drive emitter
500mm CO - AX cable type RC5327230
(2 cables in parallel)
Honeywell sweetspot HFE 4020 - 013
Test circuit emitter current
Test circuit receiver and gate drive receiver
30mA
Honeywell sweetspot HFD 3029 - 002
ELECTRICAL CHARACTERISTICS
Symbol
Parameter
I
+5V PSU current
V1
I_V2
+15V PSU current
I_V3
V_1(Min)
V
2(Min)
V
3(Min)
I_FGM
I_G(ON)
dI_FG/dt
dI /dt
GQ
-15V PSU current
+5V PSU minimum
+15V PSU minimum
-15V PSU minimum
Peak forward gate current
On-state gate current
Rate of rise of positive gate current
Rate of rise of negative gate current
Conditions
500Hz, 50% duty cycle
500Hz
500Hz, I_T = 3000A
GTO T_j= 125˚C
-
-
-
-
-
Measured 10 - 75% I
FGM
I = 3000A, 90% I - 50% I
T
G(ON)
GQM
Min. Typ. Max. Units
-
-
5.5
A
-
-
0.70
A
-
-
3.8
-
14.0
-
14.0
-
40
-
-
10
-
40
-
50
12
A
-
V
-
V
-
V
-
A
-
A
-
A/µs
-
A/µs
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