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| GDU90-20721 Datasheet, PDF (1/4 Pages) Dynex Semiconductor – Gate Drive Unit | |||
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GDU 90-20721
GDU 90-20721
Gate Drive Unit
Replaces March 1998 version, DS4567-3.1
DS4567-4.0 January 2000
This datasheet should be used in conjunction with the application note AN4571, GDU9X-XXXXX Series, Gate Drive Unit.
APPLICATIONS
s Used with Gate Turn-Off Thyristors in high current switching
applications
KEY PARAMETERS
IFGM
IG(ON)
dIGQ/dt
40A
10A
50A/µs
CONDITIONS - (UNLESS STATED OTHERWISE)
V1 = +5V
Test circuit GTO
V2 = +15V
DG858BW
V3 = -15V
GDU connection to GTO
Test circuit emitter and gate drive emitter
500mm CO - AX cable type RC5327230
(2 cables in parallel)
Hewlett Packard versatile link HFBR 1524
Test circuit emitter current
Test circuit receiver and gate drive receiver
30mA
Hewlett Packard versatile link HFBR 2524
ELECTRICAL CHARACTERISTICS
Symbol
Parameter
IV1
+5V PSU current
I
V2
+15V PSU current
I
V3
V1(Min)
V2(Min)
V3(Min)
IFGM
IG(ON)
dI /dt
FG
dIGQ/dt
-15V PSU current
+5V PSU minimum
+15V PSU minimum
-15V PSU minimum
Peak forward gate current
On-state gate current
Rate of rise of positive gate current
Rate of rise of negative gate current
Conditions
500Hz, 50% duty cycle
500Hz
500Hz, IT = 3000A
GTO Tj = 125ËC
-
-
-
-
-
Measured 10 - 75% IFGM
IT = 3000A, 90% IG(ON) - 50% IGQM
Min. Typ. Max. Units
-
-
5.5
A
-
-
0.70
A
-
-
3.8
-
14.0
-
14.0
-
40
-
-
10
-
40
-
50
12
A
-
V
-
V
-
V
-
A
-
A
-
A/µs
-
A/µs
1/4
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