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| GDU90-20302 Datasheet, PDF (1/4 Pages) Dynex Semiconductor – Gate Drive Unit | |||
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GDU 90 20302
GDU 90-20302
Gate Drive Unit
Replaces March 1998 version, DS4560-3.1
DS4560-4.0 January 2000
This datasheet should be used in conjunction with the application note AN4571, GDU9X-XXXXX Series, Gate Drive Unit.
APPLICATIONS
s Used with Gate Turn-Off Thyristors in high current switching
applications
KEY PARAMETERS
IFGM
IG(ON)
dIGQ/dt
40A
8A
40A/µs
CONDITIONS - (UNLESS STATED OTHERWISE)
V = +5V
1
Test circuit GTO
V = +15V
2
DG758BX
V = -15V
3
GDU connection to GTO
Test circuit emitter and gate drive emitter
500mm CO - AX cable type RC5327230
Honeywell sweetspot HFE 4020 - 013
Test circuit emitter current
Test circuit receiver and gate drive receiver
30mA
Honeywell sweetspot HFD 3029 - 002
ELECTRICAL CHARACTERISTICS
Symbol
Parameter
IV1
+5V PSU current
I
V2
+15V PSU current
I
V3
V1(Min)
V2(Min)
V3(Min)
I
FGM
IG(ON)
dI /dt
FG
dIGQ/dt
-15V PSU current
+5V PSU minimum
+15V PSU minimum
-15V PSU minimum
Peak forward gate current
On-state gate current
Rate of rise of positive gate current
Rate of rise of negative gate current
Conditions
500Hz, 50% duty cycle
500Hz
500Hz, IT = 3000A
GTO Tj= 125ËC
-
-
-
-
-
Measured 10 - 75% IFGM
IT = 3000A, 90% IG(ON) - 50% IGQM
Min. Typ. Max. Units
-
-
4.40
A
-
-
0.48
A
-
-
10.0
A
3.8
-
-
V
14.0
-
-
V
14.0
-
-
V
40
-
-
A
-
8
-
A
-
40
-
A/µs
-
40
-
A/µs
1/4
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