DIM2400ESM12-A000_15 Datasheet, PDF (1/8 Pages) Dynex Semiconductor – Single Switch IGBT Module

Replaces DS5536-4
DIM2400ESM12-A000
Single Switch IGBT Module
DS5536-5 August 2014 (LN31869)
FEATURES
 10µs Short Circuit Withstand
 High Thermal Cycling Capability
 Non Punch Through Silicon
 Isolated AlSiC Base with AlN Substrates
 Lead Free construction
KEY PARAMETERS
V_CES
V_CE(sat) * (typ)
I_C
(max)
I_C(PK) (max)
1200V
2.2V
2400A
4800A
* Measured at the power busbars, not the auxiliary terminals
APPLICATIONS
 High Reliability Inverters
 Motor Controllers
 Traction Drives
The Powerline range of high power modules includes
half bridge, chopper, dual, single and bi-directional
switch configurations covering voltages from 1200V to
6500V and currents up to 2400A.
The DIM2400ESM12-A000 is a single switch 1200V,
n-channel enhancement mode, insulated gate bipolar
transistor (IGBT) module. The IGBT has a wide
reverse bias safe operating area (RBSOA) plus 10μs
short circuit withstand. This device is optimised for
traction drives and other applications requiring high
thermal cycling capability.
The module incorporates an electrically isolated base
plate and low inductance construction enabling circuit
designers to optimise circuit layouts and utilise
grounded heat sinks for safety.
9(C)
7(C)
5(C)
3(C)
2(G)
1(E)
8(E)
6(E)
4(E)
Fig. 1 Circuit configuration
ORDERING INFORMATION
Order As:
DIM2400ESM12-A000
Note: When ordering, please use the complete part
number
Outline type code: E
(See Fig. 11 for further information)
Fig. 2 Package
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
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