DF685 Datasheet, PDF (1/8 Pages) Dynex Semiconductor – Fast Recovery Diode

Replaces March 1998 version, DS4303-1.3
APPLICATIONS
s Snubber Diode For GTO Applications
DF685
DF685
Fast Recovery Diode
DS4303-2.0 January 2000
KEY PARAMETERS
V_RRM
I_F(AV)
I_FSM
Q_r
t_rr
4500V
445A
4500A
650µC
5µs
FEATURES
s Double Side Cooling
s High Surge Capability
s Low Recovery Charge
VOLTAGE RATINGS
Type Number
Repetitive Peak
Reverse Voltage
V
RRM
V
DF685 45
DF685 44
DF685 43
DF685 42
DF685 41
DF685 40
4500
4400
4300
4200
4100
4000
Lower voltage grades available.
Conditions
V = V + 100V
RSM
RRM
CURRENT RATINGS
Outline type code: M779b.
See Package Details for further information.
Symbol
Parameter
Double Side Cooled
I_F(AV)
I
F(RMS)
Mean forward current
RMS value
I
F
Continuous (direct) forward current
Single Side Cooled (Anode side)
I
F(AV)
I
F(RMS)
I
F
Mean forward current
RMS value
Continuous (direct) forward current
Conditions
Half wave resistive load, T_case = 65^oC
T_case = 65^oC
T = 65^oC
case
Half wave resistive load, T = 65oC
case
T_case = 65^oC
T = 65^oC
case
Max. Units
445
A
700
A
610
A
280
A
440
A
365
A
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