2N60 Datasheet, PDF (5/9 Pages) Unisonic Technologies – 2 Amps, 600 Volts N-CHANNEL MOSFET

TYPICAL CHARACTERISTICS
Drain Current vs. Drain-Source
Breakdown Voltage
300
250
200
150
100
50
0
0 200 400 600 800 1000
Drain-Source Breakdown Voltage, BV_DSS (V)
2N60
600V N-Channel Power MOSFET
Drain Current vs. Gate Threshold Voltage
300
250
200
150
100
50
0
0 0.5 1 1.5 2 2.5 3 3.5 4
Gate Threshold Voltage, V_TH (V)
May,2015-REV.00
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