SBT10V100CT Datasheet, PDF (2/5 Pages) DIYI Electronic Technology Co., Ltd. – 10A LOW VF SCHOTTKY RECTIFIER

ELECTRICAL CHARACTERISTICS(TA=25^oC unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
Breakdown voltage per diode
Instantaneous forward voltage per
diode
Reverse current per diode
VBR I R=0.5mA
I F=1A
I F=2A
I F=5A
VF
I F=1A
I F=2A
I F=5A
VR=70V
IR
VR=100V
100
-
TJ=25^oC
-
-
-
TJ=125^oC
-
-
-
TJ=25^oC
-
TJ=125^oC
-
SBT10V100CT
SBT10V100FCT
SBT10V100CK
SBT10V100CG
TYP.
-
0.43
0.47
0.55
0.38
0.45
0.52
5
-
7.2
MAX.
-
-
-
0.60
-
-
-
-
50
-
UNIT
V
V
V
A
A
mA
RATING AND CHARACTERISTIC CURVES
6
5
4
3
2
1
Per Diode
0
0
25 50
75 100 125 150
T_C, Case Temperature (°C)
Fig.1 Forward Current Derating Curve
100
T_J = 150°C
10
1
T_J = 125°C
0.1
0.01
Per Diode
T_J = 75°C
0.001
T_J = 25°C
0.0001
10 20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
Fig.3 Typical Reverse Characteristics
1000
100
10
Per Diode
1
1
10
100
V_R, Reverse Bias Voltage (V)
Fig.2 Typical Junction Capacitance
10
T_J = 150°C
1 ^{TJ = 125°C}
0.1
T_J = 75°C
0.01
0
T_J = 25°C
Per Diode
0.2
0.4
0.6
0.8
1
V_F, Forward Voltage (V)
Fig.4 Typical Forward Characteristics
May.2015-REV.00
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