BTB06F Datasheet, PDF (2/3 Pages) DIYI Electronic Technology Co., Ltd. – Application on 4Q such as phase control and static switching.

THERMAL CHARACTERISTICS
PARAMETER
Thermal Resistance Junction to case for DC
4Q Triac
SYMBOL
MIN
Rth j-c
TYP
MAX
3.2
UNIT
℃/W
Thermal Resistance Junction to Ambient
In free air
Rth j-a
60
℃/W
ELECTRICAL CHARACTERISTICS (T_J = 25°C, unless otherwise stated)
PARAMETER
STATIC CHARACTERISTICS
Gate Trigger Current
Latching Current
Holding Current
Gate Trigger Voltage
On-State Voltage
I_DRM
I_RRM
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
IGT
VD=12V, R_L= 33Ω
Ⅰ
Ⅱ
Ⅲ
Ⅳ
IL
VD=12V, R_L= 33Ω _â 
Ⅱ
Ⅲ
Ⅳ
IH
VD=12V, IT=100mA
VGT ^{= VD=12V,R}L ^{33Ω; Tj=25°C;Ⅰ,Ⅱ,Ⅲ,Ⅳ}
VT
IT=8.5A
I_DRM
I_RRM
V_DRM Rated / V_RRM Rated;Tj=25°C
VDRM Rated / V_RRM Rated,Tj=110°C
5
5
mA
5
5
10
20
mA
10
10
15
mA
1.5
V
1.65
V
0.01 mA
0.75
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of off-state
Voltage
Gate Controlled Turn-on Time
dV/dt
tgt
VDM=67% VDRM(max), Tj=110°C
Exponential waveform,Gate open
circuit
VD=VDRM,R_L=33Ω
50
V/µs
2
µs
Jul,2015-REV.00
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