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US1AU Datasheet, PDF (1/2 Pages) DIYI Electronic Technology Co., Ltd. – 1.0AMP ULTRA FAST RECOVERY SILICON RECTIFIER
US1AU THRU US1MU
Features
1.0AMP ULTRA FAST RECOVERY
· Low Power Loss, High Efficiency
· Ideally Suited for Automatic Assembly
·Guard Ring Die Construction
· Plastic Case Material has UL Flammability
Classification Rating 94V- 0
0.059(1.50)
0.051(1.30)
SILICON RECTIFIER
SMA/DO-214AC
0.110(2.80)
0.094(2.40)
Mechanical Data
· Case: Molded plastic SMA
· Terminals: Plated leads solderable per
MIL-STD-750,Method 2026 guaranteed
· Polarity: Color band dentes cathode end
· Mounting Position: Any
· Making: Type Number
0.086(2.62)
0.079(2.00)
0.181(4.60)
0.157(4.00)
0.012(0.305)
0.006(0.150)
0.060(1.52)
0.030(0.76)
0.010(0.25)
0.004(0.1)
0.208(5.28)
0.188(4.80)
0.008(0.203)
0.002(0.051)
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25℃ ambient temperature unless otherwise specified
Single phase,half wave,60Hz,resistive or inductive load
For capacitive load derate current by 20%
Type Number
SYMBOL US1AU US1BU US1DU US1GU US1JU US1KU US1MU Unit
Maximum Recurrent Peak Reverse Voltage
VRRM
50
100
200 400 600 800 1000 V
Maximum RMS Voltage
VRMS
35
70
140 280 420 560 700 V
Maximum DC Blocking Voltage
VDC
50 100 200 400 600 800 1000 V
Average Rectified Output Current
@TA =75 ℃
IO
1.0
A
Peak Forward Surge Current 8.3ms Single half
sine-wave superimposed on rated load (JEDEC
Method)
Forward Voltage
@IF=1.0A
Peak Reverse Current @TA =25 ℃
At Rated DC Blocking Voltage @TA =100 ℃
Maximum Reverse Recovery Time (Note 1)
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance Junction to
Ambient (Note 3)
Operating Temperature Range
Storage Temperature Range
IFSM
VFM
IR
Trr
CJ
Rθ JA
TJ
TSTG
1.0
50
35
1.3
5.0
100
17
30
-55 to+150
-55 to +150
1.7
75
A
V
uA
ns
pF
℃/W
℃
℃
Note:
1.Reverse Recovery Test Conditions:IF=0.5A,IR=1.0A,IRR=0.25A.
2. Measured at 1.0 MHz and Applied reverse Voltage of 4.0V D.C
3. 8.0MM²(.013mm Thick)Land Areas.
version:01
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